Optical low-coherence reflectometry (OLCR) for dimensional monitoring of sheet-grown silicon

Abstract

We report cross-sectional thickness and flatness measurements for edge-defined film-fed growth (EFG) solar silicon using optical low coherence reflectometry (OLCR). The measurement accuracy is ±1.5 μm with the sensor head positioned 1 cm away from the EFG silicon under test. © 1994 John Wiley & Sons, Inc.