Abstract
The 32nm lithography node is the next major target for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it cannot achieve the 32nm node as currently defined. EUV is the main solution for the 32nm node, but the evolution of immersion lithography does represent an opportunity to extend ArF lithography down to the 32nm node.This paper reports progress towards achieving 32nm lithography using immersion lithography. To achieve this next lithographic node will require new, very high refractive index fluids to replace the water used in current immersion systems.Testing and experiments to develop key technology for the 32nm node are reported. These experiments were run using interference immersion lithography.Interference imaging printers have been available for years, and with the advent of immersion lithography have a new use. Interference immersion image printing offers the user a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple, image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: fluid/resist interaction during exposure; topcoat film performance; line edge roughness of resists at extremely high resolutions; and the polarization of the image-forming light rays can all be readily studied.Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using ArF wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on both 32nm and 45nm L/S features.
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