Abstract
Fine-grained polycrystalline silicon (Si) was deposited using a plasma torch onto different substrates such as single crystal Si, polycrystalline Si, and ceramic alumina (Al 2O 3). These deposits were then recrystallized by zone-melting using optical (tungsten-halogen) lamps. The grain morphology of the deposits on Si were greatly improved, reaching that of the substrate. Those deposited on Al 2O 3 substrates were self-supporting and their grain size largely improved after recrystallization. Here we report the improvement in bulk and surface properties after zone-melting. The hole mobility, resistivity, and minority carrier diffusion length of the zone-melted samples were 225 cm 2/V-s, 0.3 ohm-cm, and 25 microns respectively. Notes on process-introduced impurities are also given.
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