Abstract
Thin films of In 2O 3:F prepared by pyrolytic decomposition show a high carrier mobility and transmission in comparison with In 2O 3:Sn. Transmission and reflection data in the 0.3–5.0μm wavelength range were used to determine the optical constants. At long wavelengths the experimental results agree with the classical dispersion formula. With an increase in the carrier concentration the plasma edge shifts towards shorter wavelengths. The dependence of the plasma wavelength on the carrier concentration (measured using the Hall effect) gives a value of 0.24 m 0 for the effective mass of the carriers in the conduction band. The absorption edge shifts towards shorter wavelengths with an increase in carrier concentration. This shift shows a linear relation with the carrier concentration raised to the power 2 3 . The combined effective mass m vc of the valence band and the conduction band is calculated to be about 0.49 m 0. This indicates the existence of a minimum in the valence band at K = 0. The refractive index of the films in the visible range varies from 1.8 to 2.1 for the films deposited at different temperatures and different doping levels. Scanning electron microscopy reveals a smooth surface with few defects. X-ray photoelectron spectroscopy and X-ray diffraction patterns reveal traces of InF 3 in an In 2O 3 matrix.
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