Abstract
Synthetic high-temperature high-pressure grown diamonds were subjected to different treatments (high-temperature annealing, electron- or neutron irradiation) with the purpose to follow genesis of defect aggregates suitable for spectrally selective photo-transformation. Conditions for the genesis of photochromic optical centers with lines at 774 and 813 nm were revealed. Phototransformation properties of Ni-related defects were examined.
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