Abstract
The band-edge property and built-in electric fields of two different Al(x)Ga(1-x)N/GaN(AlGaN/GaN) heterostructures (HSs) with and without an additional AlGaN inserted layer were studied by thermoreflectance (TR), photoluminescence (PL), and contactless electroreflectance (CER) techniques. The PL spectra characterize the band-edge luminescence property of GaN. Free exciton transitions of AlGaN and GaN were probed experimentally by TR. Prominent Franz-Keldysh oscillations (FKOs) of GaN and the opposite FKO phase of AlGaN were simultaneously detected by the additional AlGaN inserted sample with CER owing to the enhancement effect of built-in electric fields of GaN and AlGaN with the same polarity direction. Optoelectronics properties of the two HSs were characterized by the experimental analyses.
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