Abstract
In this study, we present the optical characteristics of A-plane ZnO/ZnMgO multiple quantum wells (MQWs) with different well widths grown on R-plane sapphire substrates by pulsed laser deposition (PLD). The energy gaps of ZnO and ZnMgO have been observed by photoluminescence (PL) and absorption spectra. The electrons confined in the ZnO wells transit from the electron ground sub-band to the heavy-hole ground sub-band (noted as 11H) located at 3.40 and 3.57 eV for the ZnO/ZnMgO MQWs samples with well widths of 5.6 and 1.2 nm, respectively. The strong anisotropic polarization characteristic has been studied by polarization-dependent PL measurements. For comparison, we also calculated the transition energies of different well thicknesses varying from 1 to 6 nm. The theoretical results match quite well with the experimental values and revealing the suitable conduction band offset Q c =0.6. The temperature dependence of PL spectra is being investigated, in the temperature range between 10 and 300 K.
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