Abstract
Atomic layer growth of AlAs and AlGaAs were tried by alternate supply of GaCl 3, AlCl 3 and AsH 3, and the growth process was monitored by an optical method such as the surface photo-absorption (SPA) method and the optical interference method. Although atomic layer epitaxy (ALE) of GaAs can be performed by alternate supply of GaCl 3 and AsH 3, that of AlAs on GaAs could not be obtained, probably due to surface oxidation of AlAs, AlAs, however, could be grown by simultaneous supply of AlCl 3 and AsH 3. It was confirmed by the SPA signal that if the AlCl 3-adsorbed AlAs surface is exposed to GaCl 3, the adsorbed AlCl 3 is replaced by GaCl and/or GaCl 3 and GaAs ALE growth on AlAs can be performed. A slightly Al-containing (Al)GaAs layer could be grown by addition of AlCl 3 to GaCl 3 in GaAs ALE growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
