Abstract
We prepared and applied a-SiOx thin films to hydrogenated microcrystalline silicon solar cells (µc-Si:H) as a front antireflection layer (FAL) in order to reduce optical reflection loss. By inserting the optimized SiOx FAL with a refractive index of ∼1.75 into the glass/ZnO interface a relative increase in short-circuit current density (Jsc) by 5% could be obtained which corresponded to an improved spectral response in the 550–950 nm wavelength regions. In addition, this optimized FAL did not deteriorate the properties of the ZnO layer because no significant changes in open-circuit voltage (Voc) and fill factor (FF) were observed. As a result, the cell with an efficiency of as high as 8.28% (Voc=0.495 V, Jsc=25.09 mA/cm2, FF=0.667) could be obtained.
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