Abstract
We have performed stimulated emission and unsaturated optical gain measurements at low temperature in the indirect semiconductors GaSe and InSe at excitation intensities above 0.5 MW/cm2, i.e., when the critical Mott density is overcome and an electron-hole plasma (EHP) is generated.In both GaSe and InSe the gain spectra show only the band due to zero phonon recombination of indirect plasma (IEHP). No optical gain due to direct plasma (DEHP) is observed. The comparison of experimental results with theoretical models is very satisfactory. In InSe it becomes also a tool for evaluating the consistence of proposed band structures with observed data.
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