Abstract
AbstractWe used a strain‐compensation technique to fabricate multi‐stacked InAs quantum dot (QD) structures on InP(311)B substrates. We stacked 60 layers of InAs QDs without degrading the crystal quality and achieved a structure with a total QD density of 4.9 × 1012 cm‐2. Then dependence of optical gain on the number of QD layers stacked was investigated, using variable stripe‐length (VSL) method. The optical gain increased with increase in the number of QD layers. We obtained an optical gain of 49.7 cm‐1 when 60 QD layers were stacked. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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