Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures

Abstract

Gain characteristics of heavily doped AlxGa1 –xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.