Abstract
A resonance-periodic gain heterostructure containing 8 ZnSe/CdS/ZnSe quantum wells (QWs) with type II band offsets was grown by metalorganic vapor phase epitaxy (MOVPE). Based on this structure, a semiconductor laser with a microcavity and longitudinal pumping by laser diode radiation with a wavelength of 440 nm was implemented. We obtained a peak power of 0.32 W at a wavelength of 525 nm with a slope efficiency of 10 %. The threshold gain was estimated at ∼ 104 cm−1. The calculation of the gain spectra at different pump levels is provided, which showed that at a concentration of nonequilibrium carriers of 1.5∙1013 cm−2, the gain can exceed 5000 cm−1.
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