Abstract
The key objective of this research paper is to design a type-II nano-heterostructure which could emit the radiations of the wavelength ˜1.55 μm. Here, we have proposed and designed a novel type-II “W” shaped InAlAs/InGaAs/GaAsSb nanoscale heterostructure and simulated its optical gain characteristics theoretically with the help k.p method by solving a 6×6 Luttinger-Kohn Hamiltonian for determining the carrier’s localities within the heterostructure. The other calculations have been performed to determine the dispersion of carrier’s energies, dipole transition elements and the optical gain characteristics. Finally, the simulated results clarified that the designed heterostructure is competent to emit the radiations of ˜1.55 μm wavelength (wavelength of near infrared region) and can be utilized in optical fiber communication systems.
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