Abstract
Erbium–ytterbium (Er–Yb)-co-doped porous silicon planar waveguides were prepared from P +-type (1 0 0) oriented silicon wafer. Erbium and ytterbium ions were electrochemically introduced into the porous structure of the waveguide core. The doping profiles of erbium and ytterbium ions were determined by EDX analysis performed on sample cross-section. The mean concentration in the guiding layer is of about 1 × 10 20 cm −3. The refractive indices were measured from co-doped porous silicon and undoped waveguides after the thermal treatments. The photoluminescence (PL) peak of optically activated erbium ions at 1.53 μm was recorded. The PL enhancement is the result of the energy transfer from the excited state of Yb to the state of Er. Optical losses at 1.55 μm were measured on these waveguides and were of about 2 dB/cm. An internal gain at 1.53 μm of 5.8 dB/cm has been measured with a pump power of 65 mW at 980 nm.
Highlights
Since the last few years, erbium (Er) and ytterbium (Yb) doped material such as glasses have received much attention due to their applications as amplifiers in optical telecommunication in the 1.55 m [1]
We present a study of the optical properties performed on planar porous silicon waveguide (PSWG) prepared by varying the anodization current density during the formation of porous silicon
By Energy Dispersive X ray (EDX) analysis performed in different regions of the PSWG, the profiles of Er and Yb have been determined for different samples
Summary
Since the last few years, erbium (Er) and ytterbium (Yb) doped material such as glasses have received much attention due to their applications as amplifiers in optical telecommunication in the 1.55 m [1]. Erbium and ytterbium ions were successfully introduced in porous silicon by many methods such as ion implantation [7], molecular beam epitaxy [8,9], co-sputering [10] or by electrochemical deposition [11,12]. We present a study of the optical properties performed on planar porous silicon waveguide (PSWG) prepared by varying the anodization current density during the formation of porous silicon. Refractive index measured at 1.53 m was determined for the co-doped PSWG after the thermal treatments. The “on/off” gain at 1.53 m of co-doped waveguide has been measured for a 0.5 cm length samples at 980 nm pumping
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