Abstract
Optical FM signal amplification by semiconductor lasers is studied by emphasizing their bandwidth characteristics. The laser is operated either in an injection-locked mode or in a resonant amplification mode by keeping the drive current above or just below its threshold. The bandwidths of both amplifiers are evaluated by the reduction in modulation sidebands and are compared with the bandwidths measured statically by scanning the frequency of incident CW wave. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sqrt{G}B = 25</tex> GHz gain bandwidth product is obtained for both operation modes using a double heterostructure AlGaAs semiconductor laser. The bandwidth obtained in the above procedure is in good agreement with theoretical results.
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