Optical feedback dependence of laser diode relative intensity noise

Abstract

The relative intensity noise (RIN) of a semiconductor laser subject to optical feedback ahs been experimentally studied. At low bias current, a low RIN is observed with low feedback ration, the RIN increased in the coherence collapse regime (regime IV) and decreased in regime V. The RIN in regime V is lower than that of the solitary laser. The measurements are found to be in good qualitative and quantitative agreement with theoretical predictions. For higher bias current, a higher feedback ratio is needed for the semiconductor laser to transit from regime IV to V.