Abstract
We have studied electronic properties of GaAs-AlAs short-period superlattices grown by molecular-beam epitaxy. A direct-gap to ``indirect''-gap transition has been evidenced through optical experiments on a large number of samples. It also corresponds to a type-I to type-II superlattice transition. Our results are in good agreement with an envelope-function description applied to each extremum of the host-material band structure. As a result of spatial transfer of electrons in AlAs, we have obtained an accurate value of the offset parameter \ensuremath{\Delta}${E}_{c}^{\ensuremath{\Gamma}}$/\ensuremath{\Delta}${E}_{g}^{\ensuremath{\Gamma}}$=0.67. .AE
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