Abstract
A study was performed on the rf sputtering plasma of pure cobalt and gadolinium metals and of Gd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">26</sub> Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">74</sub> alloy using optical emission spectroscopy (OES), for various discharge conditions such as the argon pressure P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ar</sub> , target voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rf</sub> , and substrate bias voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> . From measurements of OES line intensities and deposition rates for various values of P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ar</sub> , V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rf</sub> and the focussing field H, it was found that the line intensities of both Co and Gd atoms are represented as linear or square functions of the atomic densities in the plasma. Moreover, the preferential resputtering effect of Gd atoms was also confirmed from the change in line intensity for a negative bias voltage with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> ≧20 V.
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