Abstract
We present here a study of Er doping of n+-type porous silicon. The samples were characterized in situ by their electrochemical behavior and ex situ by optical reflectivity and scanning electron microscopy (SEM). A clear correlation between the optical properties and the Er content of the samples is demonstrated. Refractive index dependence on Er content has also been obtained through simulations of reflectivity spectra in the 350–2500 nm range.
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