Abstract
AbstractTin diselenide single crystals have been grown by the physical vapour transport (PVT) method. Optical absorption studies give an indirect allowed transition at 1.03 eV at room temperature. The electrical resistivity parallel and perpendicular to c‐axis, mobility and carrier concentration have been determined. Dependence of resistivity parallel to c‐axis on temperature gives an activation energy of 0.072 eV. Growth spirals observed for the first time on the as grown faces of these crystals are also presented here.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
