Abstract
Soda-lime-silicate glass has been implanted with 500 keV Er ions at fluences between 8.6×1014 and 1.8×1016/cm2 with the aim to optically dope the material in the near surface region. The ion range was 100 nm, and Er concentrations in the range 0.09—1.9 at. % were obtained. The characteristic photoluminescence (PL) of Er3+ around 1.54 μm is observed at room temperature in as-implanted glass. The PL intensity increases by an order of magnitude after annealing above 500 °C, as a result of annihilation of implantation-induced defects. Annealing causes an increase in PL lifetime. As a function of Er fluence, the PL intensity first increases, but levels off above ∼6×1015 Er/cm2 (0.6 at. % Er peak concentration). The PL lifetime decreases from 13 to 1.5 ms for increasing Er concentration. The decrease in PL efficiency with concentration is attributed to concentration quenching caused by Er-Er interactions. The optimal combination of PL intensity and lifetime is reached at ≊0.4 at. % peak concentration, for which the lifetime is 6 ms. For high Er concentrations and high pump intensities (∼3 kW/cm2) an additional, intensity dependent quenching mechanism (possibly cooperative upconversion) is observed.
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