Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method

Abstract

Phase contrast microscopy (PCM) technique was demonstrated as the effective non-destructive discrimination method of TSDs and TEDs in 4H-SiC epitaxial layers in comparison with conventional polarized light microscopy, PL topography, KOH etch pit inspection and X-ray topography. The appearance of TSDs and TEDs by the PCM method is subtly modified by not only the consisting burgers vector but also the crystalline quality of the epitaxial layer or the substrate as the background. To extract more detailed information on the dislocations, the PCM inspection requires further investigation.