Abstract
We demonstrate a novel application of light-induced transient grating technique for discrimination of deep trap contribution to carrier recombination in compensated semiconductors. This application is based on photoexcitation of deep impurity levels by light interference pattern and subsequent optical monitoring of the recharged state dynamics. The spatially modulated deep trap occupation leads to changes in a probe beam absorption and formation of a transient diffraction grating. Employment of light diffraction on a short-period reflection grating allowed to realize conditions when the absorption modulation in deep traps dominates over the coexisting refractive index modulation. Selectivity of a transient reflection grating configuration solely to processes in deep traps was proven experimentally and confirmed by numerical modeling. In this way, we discriminated the deep vanadium impurity governed carrier recombination rate from the other coexisting recombination channels in as-grown and annealed semi-insulating CdTe:V crystals.
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