Abstract
This paper reviews and compares various optical diagnostic techniques for low pressure plasmas used in etching and deposition processes for microelectronics devices. Optical emission induced by electron-molecule collisions is reviewed. Both space and time-resolved measurements, combined with high-resolution lineshape measurements and rare-gas actinometry have yielded information on radical and ion formation processes, ion motion, etc. Absorption techniques are also covered, including UV, visible and IR absorption, using both lamps and tunable lasers to determine absolute number densities of stable molecules and radicals. Laser-spectroscopic techniques covered include laser-induced fluorescence, laser raman scattering, optogalvanic effects, and tunable IR laser absorption.
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