Optical Detection of the Integer and Fractional Quantum Hall Effects in GaAs at Millikelvin Temperatures

Abstract

We describe a definitive optical measurement, using band gap photoluminescence, of the integer and fractional quantum Hall effects in GaAs by a comprehensive study of integer states from ν = 1 to 10 and fractional states of the ν = 2/3 hierarchy out to the 5/9 daughter state, in an ultra-high mobility single heterojunction at 120 mK.