Abstract
A magnetooptical method based on optical detection of quantum oscillations via photoluminescence in a magnetic field is applied for characterization of the electronic structure and recom- bination mechanisms in modulation-doped semiconductor quantum structures. By studying modulation-doped InP/InGaAs two-dimensional (2D) quantum structures as an example case, the method is shown to be capable of obtaining information on: (i) the electronic structure, filling of quantum subbands, as well as the effective mass of 2D carriers and band nonparabolicity; (ii) both equilibrium and nonequilibrium concentration of 2D carriers and the dependence of the carrier concentration and lifetime on injection level.
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