Abstract
ABSTRACTOptical detection of magnetic resonance (ODMR) is applied to studies of neutral (“isoelectronic”) complex defects in GaP, via monitoring recombination of the excited bound exciton (BE) state associated with these defects. With examples of isoelectronic complex defects in GaP associated with C, Cu, Li and the PGa -antisite, it is shown how the ODMR data reveal the magnetic properties of both electrons and holes bound at such defects. The procedures to conclude on defect symmetry, structure and identity are also elucidated.
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