Abstract
Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a GaAs/In(0.2)Ga(0.8)As multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of approximately 10% after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.
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