Abstract
This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been fabricated in a linear array in order to limit the direct optical crosstalk between neighboring pixels. Experimental measurements prove that optical crosstalk has been reduced by $\sim 60$ % thanks to a strong suppression of direct optical paths. An optical model is introduced in order to describe the main contributions to crosstalk and to validate measurements.
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