Abstract
Optical cross-sections σ n and σ p of the Fe correlated absorption in InP were evaluated from near-IR absorption spectra of n- and p-type Fe doped InP. The resulting σ n and σ p values were used to determine the Fe distribution in semi-insulating InP:Fe wafers, separated into both charge states Fe 2+ and Fe 3+ . By comparing the Fe distribution with a map of the resistivity, a clear correlation was found between the electronic properties and Fe in its neutral charge state.
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