Abstract

A novel semicircular electrode metal-semiconductor-metal (SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method. For the purpose of model and performance verification, a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data. The results indicate that the physical models are able to predict the enhanced device features. Moreover, the structural parameters have been adjusted appropriately to optimize the SEMSM detector. The findings show that a device with a 2 μm finger radius and 3 μm spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm, a maximum external quantum efficiency of over 75%, and a comparable normalized photocurrent to dark current ratio of 1.192 × 1011 W−1 at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call