Abstract
AbstractThis paper describes the various properties of the printed dipole antenna on optically plasma‐induced semiconductor substrates. These properties are analyzed by using the spectral domain moment method. The input impedance and radiation pattern were calculated within the plasma densities from 0 to 2.0 × 1017 m−2 for semiconductor silicon substrate.Considering the equivalent circuit performance of the antenna, it is shown that the optical illumination is equivalent to loss loading to the antenna. Therefore, it reduces the input impedance and the radiation pattern also has significantly smaller amplitude compared to that without optical illumination. A half‐wavelength antenna is fabricated on a high‐resistivity silicon wafer by aluminum vapor deposition. The input impedance and radiation pattern were measured at the S band. The measured results agree considerably well with the theory.
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