Abstract
A mechanism of controlling light is studied, which is based on the change of refractive indices of narrow-gap layers in a semiconductor layered periodic Fabry-Perot type structure (superlattice) caused by the contribution of nonequilibrium charge carriers produced by controlling radiation. By choosing the wavelength of controlling light near the edge of intrinsic absorption of narrow-gap layers and by choosing the wavelength of controlled light near the edge of the band gap of a structure, one can obtain for 1.5-μm controlled radiation the modulation depth above 90%, with controlling radiation intensity of ∼6 kW/cm2.
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