Abstract

"In the present work, optical constants have been studied for pure and titanium dioxide (TiO2) doped iron oxide (Fe2O3) thin films with different titanium dioxide dopant concentrations (1, 3 and 5 %) prepared by chemical spray pyrolysis technique on glass substrates. The optical properties of the films, which were prepared with a thickness of (260±10) nm, have been determined by using Shimadzu spectrophotometer, the optical transmittance measurements in the spectral region from (500- 1100) nm. Direct energy gap for (Fe2O3) equal (2.01) eV, it increases with increasing of TiO2%. The optical constants such as refractive index, extinction coefficient and dielectric constants have been calculated for all prepared films. The results show that all optical constants decrease with the increasing of dopant ratios."

Highlights

  • "Over the last decades, semiconductor thin films have attracted considerable attention from the research community because of their wide use in the fabrication of solar cells and other optoelectronic devices

  • The most spectacular examples are found in microelectronics, which modern electronic devices are based on different thin film technologies combined with methods of microstructuring [1]

  • The effect of doping with TiO2 has been studied on optical constants of Fe2O3 thin films have been deposited by chemical spray pyrolysis before and after doping."

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Summary

Introduction

"Over the last decades, semiconductor thin films have attracted considerable attention from the research community because of their wide use in the fabrication of solar cells and other optoelectronic devices. "Titanium dioxide TiO2 material has been attracting a great deal of attention amongst researchers because of its unique properties such as high optical transparency, wide band gap energy, high refractive index, high dielectric constant, non-toxicity, abundance in nature and good chemical stability in undesirable environment conditions [5]. The absorption coefficient (α) for pure and doped Fe2O3 thin films deposited with different concentration of TiO2 is calculated by using equation (3) [12]." Where: (A) is absorbance and (t) is the thickness of thin films.

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