Abstract
n -type ZnMnO spin injection layers were grown by pulsed laser deposition on top ofn-ZnMgO∕ZnO∕p-AlGaN∕p-GaN hybrid spin light-emitting diode (LED) structures synthesized by molecular-beam epitaxy. Both the ZnMnO∕ZnMgO∕ZnO∕AlGaN∕GaN structures and control ZnMnO samples show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5T, respectively. This indicates difficulties in generating spin polarization by optical spin orientation or possible efficient spin losses. The results are similar to those found earlier for GaMnN∕InGaN∕AlGaN spin-LED structures and indicate that these wide-band-gap dilute magnetic semiconductors with weak spin-orbit interaction and hexagonal symmetry are not attractive for spin-LED applications.
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