Abstract
Both collection and excitation modes of scanning near-field optical microscopy were used to study a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. Collection and excitation modes provide the near-field optical propagating intensity distribution and local photoconductivity information, respectively, at the facet of laser diode. Results show highly localized spatial correlation of the laser diode structure and its optical performance at the facet. Defect level in the energy range of 60–380 meV below the conduction band in the highly n-doped (Al0.7Ga0.3)0.5In0.5P cladding layer was found by the excitation mode using the wavelengths of 543.5 and 632.8 nm. Spatially resolved near-field optical spectra of both stimulated and spontaneous emissions were acquired as well. Longitudinal modes of the stimulated emission of laser diode were observed locally.
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