Abstract
AbstractIn this paper we present results for the absorption coefficient and refractive index spectra of p-and n-type silicon membranes doped with phosphorous or boron at different levels. These results cover the wide energy range from 0.5 eV up to 2.5 eV, thus including effects of subgap defect and impurity absorption, and the range of possible transitions to higher conduction band minima. The results have been obtained by utilizing both a conventional transmission and reflection measurement technique at small values of transmittance, and a recently developed optical interference spectroscopy characterization technique. The results in the visible and near infrared regions from the two techniques have been compared, and the range of transmission where the conventional technique is applicable have been determined. The preliminary analysis of these data indicate that a new information regarding the Si electronic band structure can be extracted.
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