Abstract
Optical spectroscopies such as photoreflectance offer unique and non-invasive tools that can be used to probe the bulk and surface electrical properties of processed semiconductors. Because of their contactless nature, they can also serve as in-situ, as well as ex-situ diagnostics of processing effects during various stages of optoelectronic device formation. In this paper, we will focus on the applications of photoreflectance to study the effects of various processing procedures such as dry etching, surface passivation and metallization on the electrical properties of GaAs. We will show how certain information, such as barrier heights and densities of surface states can be obtained in a contactless fashion.
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