Abstract
We report on optical examination of structural properties of cubic-In2O3 (c-In2O3) degenerate-semiconducting-oxide thin-film nanostructures grown on Si (100) substrates using vapor transport method driven with vapor–liquid–solid mechanism. Two different types of dense (A) and loose (B) c-In2O3 thin-film nanorods have been, respectively, characterized by photoluminescence (PL), time-resolved photoluminescence (TRPL), thermoreflectance (TR), and Hall and resistivity measurements. Strong excitonic emissions detected from the PL results of the A and B samples identify the high-crystalline quality of the arrow-type c-In2O3 nanorods. Theoretical modeling fits on the TRPL results of the A and B samples characterize and identify defect mechanisms of the nanostructured thin films. Near-band-edge and above-band-edge transitions such as excitons, direct band gap, and Burstein–Moss shift (above direct gap) in the degenerate A and B c-In2O3 have also been detected by TR measurement. Field-emission scanning electron mi...
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