Abstract
The assumption of material homogeneity in the analysis of optical reflectance or transmittance data is often invalid, as, for example, in ion-implanted and diffused semiconductors. A new closed-form solution in integral form for the reflectance of material with an inhomogeneous refractive index profile is presented. Practical examples such as a buried Gaussian refractive index profile and a gradual transition region described by half a Gaussian are discussed. Estimates of the standard deviation σ and average depth x p of a Gaussian profile are obtained directly from optical reflectance data. There is good agreement between our theory, experimental data and simulations pertaining to ion-implanted material.
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