Abstract
The optical properties of porous silicon (PS) doped Erbium (Er) for different amount of Er was investigated.Porous silicon was prepared using electrochemical etching on p-type Si.The weight of Er varies from 0.01g, 0.02, 0.03g and 0.04g and was doped using thermal diffusion technique. Sample was annealed for one hour at temperature of 300oC for diffusion using chemical vapour deposition (CVD).Photoluminescence spectroscopy analysis was performed to investigate the PL properties on PS doped Er. The physical properties of Er doped PS was investigated by Fourier Transform Infrared (FTIR) spectroscopy. The PL results shows that for 0.02g weight of Er doped on PS has the highest peak intensity and quenching effect observed at amount of Er higher than 0.02g doped on PS. From the FTIR analysis shows the existence of Er-O bonding as the impurity molecule which suggests that Er successfully doped onto PS.
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