Abstract
Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching.
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