Optical characterization of laser-driven double Morse quantum wells

C.A Duque,H Sari,I Sökmen,S Sakiroglu,E Kasapoglu

doi:10.1016/j.heliyon.2019.e02022

Abstract

In this study, the first-order linear, third-order nonlinear, and total absorption coefficients for the intersubband transition between the two lower-lying electronic levels in both symmetric and asymmetric double Morse quantum wells under the non-resonant high-frequency intense laser field are investigated. The study takes into account the effects of the structure parameters. The results show that the electronic and also accordingly optical properties of the structures which we focus on can be adjustable to obtain a convenient response to certain studies or purposes by changing the applied external field and optical intensity as well as structure parameters.

Highlights

Low dimensional structures such as quantum wells (QW), quantum wires, and quantum dots are very active research topics of nanoscience and nanotechnology that are the most important fields in the electronic and optical properties of solids and the design of high performance electronic, photonic, and optoelectronic systems
Double quantum well (DQW) which consist of the various semiconductor materials appear frequently in the lasers emitting light in a wide range of wave length that is of great importance in optical communications and they are taken into consideration as effective THz detectors [12, 13]
We have investigated the optical properties both of the symmetric and asymmetric double Morse quantum wells (DMQW) under the non-resonant highfrequency intense laser field (ILF) by taking into account the effects of the structure parameters

Summary

Introduction

Low dimensional structures such as quantum wells (QW), quantum wires, and quantum dots are very active research topics of nanoscience and nanotechnology that are the most important fields in the electronic and optical properties of solids and the design of high performance electronic, photonic, and optoelectronic systems. DQWs which characterized the bilayer systems are the semiconductor heterostructures exhibiting tunnel coupling It means that the wave functions of an each well overlap in the barrier region and the subband energy levels become split off. Nonlinear optical properties of semiconductor QWs mainly depend on the asymmetry of the confinement potential and so the optical properties of the low dimensional semiconductor heterostructures with the Morse potential, due to the inherent asymmetric character, have been studied intensively [19, 20, 21, 22]. Ported on the optical properties of double Morse potential quantum wells in the literature By considering this situation, we have investigated the optical properties both of the symmetric and asymmetric double Morse quantum wells (DMQW) under the non-resonant highfrequency intense laser field (ILF) by taking into account the effects of the structure parameters. The organization of the paper is as follows: Section 2 contains the presentation of the theoretical framework, in Section 3, we discuss the obtained results, and in Section 4, we give our conclusions

Theoretical framework

Results and discussion

Conclusions

Funding statement