Abstract
Abstract This paper presents results concerning the ability of second harmonic generation (SHG) and spectroellipsometry (SE) to probe ion implantation effects in Si and Si/SiO2 structures. BF2 and As implanted Si/SiO2 (0.1 μ) samples are analysed by SHG; both dose and ion type effects are identified and the SHG signals are correlated with simulations of ion and vacancies depth distributions. Boron implanted Si samples were investigated by SE, showing how important information about the re-growth of the Si network after post-implantation annealing can be obtained. The multilayer model approach which was used for the data analysis can give also details referring to the thickness of the oxide, on low resistivity substrates. These results are also supported by computer simulations.
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