Abstract
An on-chip supercontinuum (SC) source spanning from 900 nm to 2000 nm has been experimentally presented and analyzed based on a G e 11.5 A s 24 S 64.5 (GeAsS) planar waveguide at telecommunication wavelength. The nonlinear response parameter ( γ ) of the GeAsS waveguide is estimated to be ∼ 12 / W / m at the pump wavelength using resonant grating waveguide (RGW) nonlinear refractive index ( n 2 = 2 × 1 0 − 18 m 2 / W ), which is measured by the z-scan technique. The dispersion of the waveguide is carefully engineered based on the refractive index of the GeAsS film where the film structure is confirmed by a Raman spectrum exhibiting consistency with the corresponding glass. The results suggest that the GeAsS glass is expected to be an ideal platform for on-chip devices.
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