Abstract
CdSxSe1−xalloys have been deposited on quartz substrates by means of pulsed laser ablation, a relatively new technique for growing semiconductor films. We obtained high quality polycrystalline films which present photoluminescence efficiency up to at room temperature. The dependence of the band gap on the x composition, measured by absorption spectra at 10 K, shows an upwards band gap bowing. The real part of the refractive index in the transparent region at room temperature is well described by the Sellmeier relation.
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