Abstract
Barium Strontium Titanate (BST) thin film is the most interesting main material to study because it has a high dielectric constant. Barium Strontium Titanate (Ba1-xSrxTiO3) thin films was prepared with composition variations of x = 0.25: 0.3 and 0.35 annealed at 600°C for 1 hour using the sol-gel method. The objective of this study was to determine the width of the energy band-gap from the Ba1-xSrxTiO3 thin-film material. Characterization used ultraviolet visible spectroscopy, while data were obtained using absorbance data including transmittance, refractive index, sample thickness, absorption coefficient and energy band-gap using the Tauc Plot method. The energy band-gap for each Ba0.75Sr0.25TiO3 thin film annealed at 600°C for 1 hour was 3.82eV, Ba0.7Sr0.3TiO3 thin film was 3.31eV, and Ba0.65Sr0.35TiO3 thin film was 3.39eV. Band-gap energy values of the films showed that Ba1-xSrxTiO3was in the range of semiconductors value.
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