Abstract
Based on the interference fringes in transmission spectra at normal incidence of thin films of As 2S 3 and As 2Se 3 semiconducting glass compositions deposited by thermal evaporation, a method is applied that makes it possible to obtain a parameter indicating the degree of film thickness uniformity, and to accurately determine the refractive index subsequently used to derive the average film thickness. Thickness measurements have been performed with a surface profiling stylus to check the results from the transmission spectra, showing a very good agreement between both measurements. The dispersion of n is discussed in terms of the single-oscillator Wemple and DiDomenico model. The optical absorption edges are described using the non-direct transition model proposed by Tauc. The optical energy gaps were calculated using Tauc's extrapolation, resulting in values of 2.37 and 1.80 eV respectively. Finally, the optical band gap is interpreted in terms of the bond-strengths of the chemical bonds present in the glass compositions under study.
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