Abstract
A GaAs/GaAlAs-based asymmetric microcavity structure was studied by various optical characterization techniques. The angle-dependent reflectance (R) spectra showed that the cavity mode (CM) superimposed on quantum well excitonic transitions. The resonance enhancement effect between the excitonic transitions and the CM in the weak-coupling regime was explored using the angle-dependent differential surface photovoltage spectroscopy (DSPS) and photoluminescence (PL), and temperature-dependent PL. In this work, we have also implemented a new modulation technique, namely, the angle modulation reflectance (AMR) to decouple the CM from the overlapped excitonic transitions. The AMR technique has been demonstrated to be an efficient method for the study of weak coupling effect in the microcavity structure.
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